|
CEL |
RF FET 4V 12GHZ 4MICROX |
в производстве | pHEMT FET | 12GHz | 13.7dB | 2V | 15mA | 0.5dB | 10mA | 125mW | 4V | 4-Micro-X | 4-Micro-X |
|
STMicroelectronics |
TRANSISTOR RF 5X5 POWERFLAT |
в производстве | LDMOS | 500MHz | 19dB | 12.5V | 2.5A | - | 50mA | 3W | 40V | 8-PowerVDFN | PowerFLAT™ (5x5) |
|
Ampleon USA Inc. |
RF FET LDMOS 65V 17DB 16VDFN |
в производстве | LDMOS (Dual), Common Source | 2.14GHz | 17dB | 28V | - | - | 110mA | 2W | 65V | 16-VDFN Exposed Pad | 16-HVSON (6x4) |
|
STMicroelectronics |
FET RF 40V 500MHZ PWRSO10 |
в производстве | LDMOS | 500MHz | 17dB | 12.5V | 2.5A | - | 50mA | 3W | 40V | PowerSO-10 Exposed Bottom Pad | 10-PowerSO |
|
Ampleon USA Inc. |
RF FET LDMOS 104V 22DB 12VDFN |
в производстве | LDMOS (Dual), Common Source | 860MHz | 22dB | 50V | - | - | 60mA | 10W | 104V | 12-VDFN Exposed Pad | 12-HVSON (6x5) |
|
STMicroelectronics |
TRANSISTOR RF N-CH FET POWERSO-10RF |
в производстве | LDMOS | 2GHz | 11dB | 13.6V | 5A | - | 150mA | 10W | 40V | PowerSO-10RF Exposed Bottom Pad (2 Formed Leads) | PowerSO-10RF (Formed Lead) |
|
M/A-Com Technology Solutions |
HEMT N-CH 28V 5W DC-6GHZ 8SOIC |
в производстве | HEMT | 0Hz ~ 6GHz | 14.8dB | 28V | 1.4A | - | 50mA | 4W | 100V | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
Ampleon USA Inc. |
RF FET LDMOS 104V 22DB 12VDFN |
в производстве | LDMOS (Dual), Common Source | 860MHz | 22dB | 50V | - | - | 60mA | 10W | 104V | 12-VDFN Exposed Pad | 12-HVSON (6x5) |
|
Cree/Wolfspeed |
RF MOSFET HEMT 28V DIE |
в производстве | HEMT | 6GHz | 15dB | 28V | - | - | 100mA | 8W | 84V | Die | Die |
|
Cree/Wolfspeed |
RF MOSFET HEMT 28V 6QFN-EP |
в производстве | HEMT | 0Hz ~ 6GHz | 12dB | 28V | - | - | 100mA | 8W | 84V | 6-VDFN Exposed Pad | 6-QFN-EP (3x3) |
|
IXYS-RF |
RF MOSFET N-CHANNEL DE475 |
в производстве | N-Channel | - | - | - | 24A | - | - | 1800W | 1000V | 6-SMD, Flat Lead Exposed Pad | DE475 |
|
Ampleon USA Inc. |
RF FET LDMOS 65V 18.5DB SOT538A |
в производстве | LDMOS | 2.11GHz ~ 2.17GHz | 18.5dB | 28V | - | - | 100mA | 700mW | 65V | SOT-538A | 2-CSMD |
|
Ampleon USA Inc. |
RF FET LDMOS 65V 18.5DB SOT538A |
в производстве | LDMOS | 2.11GHz ~ 2.17GHz | 18.5dB | 28V | - | - | 100mA | 700mW | 65V | SOT-538A | 2-CSMD |
|
Ampleon USA Inc. |
RF FET LDMOS 65V 18.5DB SOT538A |
в производстве | LDMOS | 2.11GHz ~ 2.17GHz | 18.5dB | 28V | - | - | 100mA | 700mW | 65V | SOT-538A | 2-CSMD |
|
IXYS-RF |
RF MOSFET 2 N-CHANNEL DE275 |
в производстве | 2 N-Channel (Dual) | 70MHz | 17dB | 100V | 10A | - | - | 270W | 500V | 8-SMD, Flat Lead Exposed Pad | - |
|
Cree/Wolfspeed |
RF MOSFET HEMT 50V 12DFN |
в производстве | HEMT | 6GHz | 20.4dB | 50V | - | - | 130mA | 30W | 125V | 12-VFDFN Exposed Pad | 12-DFN (4x3) |
|
Cree/Wolfspeed |
RF MOSFET HEMT 28V 440109 |
в производстве | HEMT | 0Hz ~ 6GHz | 13dB | 28V | 3.5A | - | 100mA | 8W | 84V | 440109 | 440109 |
|
Cree/Wolfspeed |
RF MOSFET HEMT 28V 440166 |
в производстве | HEMT | 0Hz ~ 6GHz | 14.5dB | 28V | 3.5A | - | 200mA | 12.5W | 84V | 440166 | 440166 |
|
Ampleon USA Inc. |
RF FET LDMOS 65V 19DB SOT467C |
в производстве | LDMOS | 1.3GHz | 19dB | 32V | - | - | 200mA | 35W | 65V | SOT467C | SOT467C |
|
Ampleon USA Inc. |
RF FET LDMOS 65V 18.5DB SOT12701 |
в производстве | LDMOS | 2.45GHz | 18.5dB | 32V | - | - | 20mA | 250W | 65V | SOT-1270-1 | SOT-1270-1 |
|
Cree/Wolfspeed |
RF MOSFET HEMT 28V 440196 |
в производстве | HEMT | 5.5GHz ~ 5.8GHz | 11dB | 28V | 1.5A | - | 115mA | 15W | 84V | 440196 | 440196 |
|
Cree/Wolfspeed |
RF MOSFET HEMT 28V 440166 |
в производстве | HEMT | 5.65GHz | 12dB | 28V | - | - | 200mA | 12.5W | 84V | 440166 | 440166 |
|
Cree/Wolfspeed |
RF MOSFET HEMT 28V 440166 |
в производстве | HEMT | 3GHz | 15dB | 28V | - | - | 100mA | 15W | 84V | 440166 | 440166 |
|
STMicroelectronics |
IC TRANSISTOR RF HF/VHF/UHF M174 |
в производстве | N-Channel | 175MHz | 15dB | 50V | 20A | - | 250mA | 150mW | 125V | M174 | M174 |
|
Cree/Wolfspeed |
RF MOSFET HEMT 40V DIE |
в производстве | HEMT | 18GHz | 17dB | 40V | - | - | 360mA | 70W | 100V | Die | Die |
|
Ampleon USA Inc. |
RF FET LDMOS 110V 27.5DB SOT467C |
в производстве | LDMOS | 225MHz | 27.5dB | 50V | 3.6A | - | 50mA | 20W | 110V | SOT467C | SOT467C |
|
Ampleon USA Inc. |
RF FET LDMOS 104V 21DB SOT467C |
в производстве | LDMOS | 860MHz | 21dB | 50V | - | - | 500mA | 140W | 104V | SOT467C | SOT467C |
|
Ampleon USA Inc. |
RF FET LDMOS 104V 21DB SOT467B |
в производстве | LDMOS | 860MHz | 21dB | 50V | - | - | 500mA | 140W | 104V | SOT467B | LDMOST |
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Microsemi Corporation |
MOSFET RF POWER N-CH 50V 300W M208 |
в производстве | N-Channel | 175MHz | 16dB | 50V | 36A | - | 500mA | 300W | 170V | 4-SMD | M208 |
|
Ampleon USA Inc. |
RF FET LDMOS 110V 27.2DB SOT502A |
в производстве | LDMOS | 225MHz | 27.2dB | 50V | 42A | - | 900mA | 300W | 110V | SOT-502A | LDMOST |
|
Cree/Wolfspeed |
RF MOSFET HEMT 28V 440166 |
в производстве | HEMT | 0Hz ~ 6GHz | 13dB | 28V | 7A | - | 250mA | 30W | 84V | 440166 | 440166 |
|
STMicroelectronics |
IC TRANSISTOR RF HF/VHF/UHF |
в производстве | N-Channel | 30MHz | 23.5dB | 50V | 40A | - | 250mA | 300W | 125V | M177 | M177 |
|
Ampleon USA Inc. |
RF FET HEMT 150V 14.5DB SOT1227A |
в производстве | HEMT | 3GHz ~ 3.5GHz | 14.5dB | 50V | - | - | 50mA | 10W | 150V | SOT-1227A | CDFM2 |
|
Ampleon USA Inc. |
RF FET LDMOS 135V 28DB SOT1121A |
в производстве | LDMOS (Dual), Common Source | 108MHz | 28dB | 50V | - | - | 100mA | 350W | 135V | SOT-1121A | LDMOST |
|
Cree/Wolfspeed |
RF MOSFET HEMT 28V 440166 |
в производстве | HEMT | 4.5GHz ~ 6GHz | 11dB | 28V | - | - | 250mA | 30W | 84V | 440166 | 440166 |
|
Cree/Wolfspeed |
RF MOSFET HEMT 28V 440166 |
в производстве | HEMT | 5.5GHz ~ 5.8GHz | 10dB | 28V | 3A | - | 250mA | 30W | 84V | 440166 | 440166 |
|
Ampleon USA Inc. |
RF FET LDMOS 104V 21DB SOT1121A |
в производстве | LDMOS (Dual), Common Source | 860MHz | 21dB | 50V | - | - | 650mA | 150W | 104V | SOT-1121A | LDMOST |
|
Ampleon USA Inc. |
RF FET LDMOS 135V 23DB SOT1214A |
в производстве | LDMOS (Dual), Common Source | 108MHz | 23.9dB | 50V | - | - | 100mA | 700W | 135V | SOT-1214A | SOT1214A |
|
Ampleon USA Inc. |
RF FET LDMOS 65V 16DB SOT540A |
в производстве | LDMOS (Dual), Common Source | 1.3GHz | 16.5dB | 32V | 32A | - | 900mA | 100W | 65V | SOT-540A | LDMOST |
|
Ampleon USA Inc. |
RF FET LDMOS 100V 21DB SOT467C |
в производстве | LDMOS | 1.2GHz ~ 1.4GHz | 21dB | 50V | 2.5A | - | 50mA | 25W | 100V | SOT467C | SOT467C |
|
Cree/Wolfspeed |
RF MOSFET HEMT 50V 440166 |
в производстве | HEMT | 0Hz ~ 6GHz | 16dB | 50V | 4.2A | - | 150mA | 30W | 125V | 440166 | 440166 |
|
Ampleon USA Inc. |
RF FET LDMOS 110V 23DB SOT1214A |
в производстве | LDMOS (Dual), Common Source | 225MHz | 23.5dB | 50V | - | - | 100mA | 600W | 110V | SOT-1214A | SOT1214A |
|
Cree/Wolfspeed |
RF MOSFET HEMT 28V 440193 |
в производстве | HEMT | 0Hz ~ 4GHz | 14dB | 28V | 10.5A | - | 500mA | 45W | 84V | 440193 | 440193 |
|
Ampleon USA Inc. |
RF FET HEMT 150V 11.5DB SOT467C |
в производстве | HEMT | 3GHz | 11.5dB | 50V | - | - | 150mA | 50W | 150V | SOT467C | SOT467C |
|
Ampleon USA Inc. |
RF FET LDMOS 135V 24.4DB SOT539A |
в производстве | LDMOS (Dual), Common Source | 108MHz | 24.4dB | 50V | - | - | 40mA | 1400W | 135V | SOT539A | SOT539A |
|
Ampleon USA Inc. |
RF FET LDMOS 135V 24.4DB SOT539B |
в производстве | LDMOS (Dual), Common Source | 108MHz | 24.4dB | 50V | - | - | 40mA | 1400W | 135V | SOT539B | SOT539B |
|
Cree/Wolfspeed |
RF MOSFET HEMT 28V 440193 |
в производстве | HEMT | 3GHz | 13dB | 28V | - | - | 300mA | 60W | 84V | 440193 | 440193 |
|
Cree/Wolfspeed |
RF MOSFET HEMT 28V 440193 |
в производстве | HEMT | 0Hz ~ 4GHz | 14dB | 28V | 14A | - | 400mA | 55W | 84V | 440193 | 440193 |
|
Ampleon USA Inc. |
RF FET LDMOS 110V 26.5DB SOT539A |
в производстве | LDMOS (Dual), Common Source | 225MHz | 26.5dB | 50V | 56A | - | 1A | 400W | 110V | SOT539A | SOT539A |
|
Ampleon USA Inc. |
RF FET LDMOS 100V 17DB SOT1121A |
в производстве | LDMOS | 1.3GHz | 17dB | 50V | - | - | 100mA | 250W | 100V | SOT-1121A | LDMOST |